J ul 1 99 8 Thin - Film Trilayer Manganate Junctions

نویسنده

  • J. Z. Sun
چکیده

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

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تاریخ انتشار 1998